| PART |
Description |
Maker |
| RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 |
40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| BTS5240G |
Smart High Side Switches - 4,5-28V(40V Loaddump), 2x25m? Limit(scr) 10A/40A P-DSO-20
Addendum for PCN-Datasheet 2004-018-A
|
INFINEON[Infineon Technologies AG]
|
| BTS5440G |
Smart High Side Switches - 4,5-28V(40V Loaddump), 4x25m? Limit(scr) 10A/40A P-DSO-28
Addendum for PCN-Datasheet 2004-018-A
|
Infineon Technologies AG
|
| FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes
40V N-Channel FLMP PowerTrench MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
| FDD8447L08 |
Fast Switching
40V N-Channel PowerTrench? MOSFET 40V, 50A, 8.5mΩ
40V N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.5mヘ
|
Fairchild Semiconductor
|
| HT1260/26OG6 |
2.6kV V[drm] Max., 1260A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基
1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| Q6040M9 Q7040M9 Q4040M9 Q2040M9 Q8040M9 Q5040M9 Q2 |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|800V V(DRM)|40A I(T)RMS|TO-218
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 15A条口（T）的有效值|20
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220
|
Motorola Mobility Holdings, Inc.
|
| CDBUR40 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=200mA
|
Comchip Technology
|
